Polyimide-based ultraviolet-operated nonvolatile photomemory device
نویسندگان
چکیده
Organic nonvolatile photomemory devices have drawn considerable attention in the field of optical computing. However, most organic use a charge-trap-type architecture that is complex and difficult to miniaturize. This paper proposes polyimide (PI) resistive device with simple metal–PI–metal configuration; its resistance can be altered using pulsed ultraviolet (UV) irradiation maintained at level even after has ceased. The also returned initial state by subsequent UV light. memory window around 7 order magnitude. Fourier-transform infrared spectroscopy UV–visible/near-infrared demonstrated caused high-energy-gap (Eg) aromatic form PI transform into low-Eg quinoid form, prompting dominant conduction mechanism change from hopping ohmic conduction. A model characterizing PI-based was developed discussed herein.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2022
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0127937